BOD33

Table 1. BOD33 Characteristics (Device Variant A)
Symbol Parameter Conditions Temp. Min. Typ. Max. Units
  Step size, between
adjacent values in
BOD33.LEVEL     - 34 - mV
VHYST VBOD+ - VBOD- Hysteresis ON   35 - 170 mV
tDET Detection time Time with VDDANA < VTH
necessary to generate a
reset signal   - 0.9(1) - μs
IBOD33 Current consumption Continuous mode 25°C - 25 48 μA
-40 to 125°C - - 50
Sampling mode 25°C - 0.034 0.21
-40 to 125°C -- - 2.29
ISbyBOD33 Current consumption in Standby mode Sampling mode 25°C - 0.132 0.38 μA
-40 to 125°C - - 1.62
tSTARTUP Start-up time     - 1.2(1) - μs
Note: 1. These values are based on simulation. These values are not covered by test limits in production or characterization.
Table 2. BOD33 Characteristics (Device Variant B)
Symbol Parameter Conditions Temp. Min. Typ. Max. Units
  Step size, between
adjacent values in
BOD33.LEVEL     - 34 - mV
VHYST VBOD+ - VBOD- Hysteresis ON   35 - 170 mV
tDET Detection time Time with VDDANA < VTH
necessary to generate a
reset signal   - 0.9(1) - μs
IBOD33 Current consumption Continuous mode 25°C - 25 48 μA
-40 to 125°C - - 52
Sampling mode 25°C - 0.03 0.21
-40 to 125°C -- - 2.91
ISbyBOD33 Current consumption in Standby mode Sampling mode 25°C - 0.13 0.38 μA
-40 to 125°C - - 1.7
tSTARTUP Start-up time     - 2.2(1) - μs